to ? 92 1. emitter 2. base 3. collector jiangsu changjiang electron ics technology co., ltd to-92 plastic-encapsulate transistors 2N4124 transistor (npn) features z high dc current gain z high transition frequency maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.01ma,i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 25 v emitter-base breakdown voltage v (br)ebo i e =0.01ma,i c =0 5 v collector cut-off current i cbo v cb =20v,i e =0 50 na emitter cut-off current i ebo v eb =3v,i c =0 50 na h fe(1) v ce =1v, i c =2ma 120 360 dc current gain h fe(2) v ce =1v, i c =50ma 60 collector-emitter saturation voltage v ce(sat) i c =50ma,i b =5ma 0.3 v base-emitter saturation voltage v be (sat) i c =50ma,i b =5ma 0.95 v collector output capacitance c ob v cb =5v,i e =0, f=1mhz 4 pf transition frequency f t v ce =20v,i c =10ma, f=100mhz 300 mhz symbol parameter value unit v cbo collector-base voltage 30 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 5 v i c collector current 0.2 a p c collector power dissipation 350 mw r ja thermal resistance from junction to ambient 357 / w t j junction temperature 150 t stg storage temperature -55~+150 www.cj-elec.com 1 c , dec ,201 5
0 l q 0 d [ 0 l q 0 d [ a 3 .300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4. 4.700 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 - 1.600 0.063 h 0.000 0.380 0.000 0.015 6 \ p e r o ' l p h q v l r q v , q 0 l o o l p h w h u v ' l p h q v l r q v , q , q f k h v 1.270 typ 0.050 typ 7 2 3 d f n d j h 2 x w o l q h ' l p h q v l r q v 7 2 6 x j j h v w h g 3 d g / d \ r x w z z z f m h o h f f r p & ' h f
7 2 7 d s h d q g 5 h h o z z z f m h o h f f r p & ' h f
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